IRF1404 |
RFQ for IRF1404 Required Field |
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| Technical/Catalog Information | IRF1404 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 202A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 121A, 10V |
| Input Capacitance (Ciss) @ Vds | 5669pF @ 25V |
| Power - Max | 333W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 196nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF1404 IRF1404 |
| Product | Manufacturers | Pack | D/C |
| IRF1404 | - | TO220 | 04+ |
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliabledevice for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features |
| `Advanced Process Technology`Ultra Low On-Resistance`Dynamic dv/dt Rating`175 Operating Temperatur`Fast Switching`Fully Avalanche Rated |
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 162 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 115 | |
| IDM | Pulsed Drain Current | 650 | |
| PD @ TC =100 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 519 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 -55 to + 175 |
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| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
